Samsung M386B4G70BM0-YK02 32GB DDR3-1600MHz LRDIMM 4Rx4 CL11 Memory

Product Description

The Samsung M386B4G70BM0-YK02 is a high-capacity 32GB Load-Reduced Dual In-line Memory Module (LRDIMM) designed for server and enterprise environments that demand superior memory performance. This module utilizes DDR3 SDRAM technology, operating at a higher frequency of 1600MHz, which provides a significant increase in data transfer rates compared to lower-speed modules. The LRDIMM architecture is specifically beneficial for systems requiring extensive memory configurations, as it employs a buffer chip to alleviate the electrical load on the memory controller, enabling greater memory capacity and channel utilization. This module is configured as 4Rx4, signifying a Quad Rank design where each rank consists of x4 (4-bit wide) DRAM chips. This configuration maximizes memory density and can contribute to improved performance by allowing for more efficient access patterns by the memory controller. The CAS Latency (CL) is rated at 11 clock cycles. While the CL11 timing is slightly higher than lower-speed modules, the increased clock frequency of 1600MHz results in a higher overall bandwidth, making it suitable for bandwidth-sensitive applications. As a Registered DIMM (RDIMM), the M386B4G70BM0-YK02 incorporates onboard registers that buffer command and address signals. This buffering is critical for maintaining signal integrity and stability in systems populated with numerous memory modules, reducing the strain on the memory controller. The inclusion of ECC (Error-Correcting Code) ensures data integrity by detecting and correcting single-bit errors, which is paramount for mission-critical server operations. This 32GB DDR3-1600MHz LRDIMM is an excellent choice for upgrading servers used for heavy virtualization, large databases, scientific computing, and other demanding workloads.