#upgradetobetter

Home/Memory/Server Memory/Samsung M386B4G70BM0-CMA1 32GB DDR3-1866MHz LRDIMM...
Samsung M386B4G70BM0-CMA1 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory

Samsung M386B4G70BM0-CMA1 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory

SKU:M386B4G70BM0-CMA1
  • Capacity: 32GB
  • Memory Type: DDR3 SDRAM
  • Form Factor: LRDIMM (Load-Reduced DIMM)
  • Speed: 1866MHz (PC3-14900)
  • Rank: 4Rx4 (Quad Rank x4)
  • Latency: CL13
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
  • Features: Integrated Register Chip
Get a Quick Price Quote

Click on Inquire to get latest price

Free U.S. Ground Shipping

Typically 1-2 handling + 3-7 transit days

Purchase orders accepted

For government, enterprise, data center, and small business customers.

Bulk Purchase Inquiry

Volume pricing and availability

Details

Product Overview

The Samsung M386B4G70BM0-CMA1 is a 32GB DDR3 LRDIMM memory module, operating at 1866MHz with a 4Rx4 configuration and CL13 latency. This Load-Reduced DIMM is designed for high-capacity server environments requiring maximum memory density and performance. It supports ECC and is ideal for memory-intensive applications.

Technical Information

Capacity32GB
Memory TypeDDR3 SDRAM
Form FactorLRDIMM
Speed1866MHz
Rank4Rx4

Additional Specifications

CAS LatencyCL13
Voltage1.5V
ECCRegistered ECC
FeaturesLoad-Reduced

Product Description

The Samsung M386B4G70BM0-CMA1 is a high-capacity 32GB DDR3 Load-Reduced DIMM (LRDIMM), engineered for enterprise-level servers and high-performance computing platforms that demand maximum memory bandwidth and density. Operating at a speed of 1866MHz, this module significantly enhances data processing capabilities, making it suitable for memory-intensive applications such as large databases, virtualization, scientific simulations, and big data analytics. The LRDIMM architecture incorporates an integrated register chip that buffers command and address signals, reducing the electrical load on the memory controller. This allows for higher memory capacities and more memory modules to be installed per channel, overcoming the limitations of traditional RDIMMs. The 4Rx4 configuration signifies quad-ranked memory, further increasing density and potentially improving performance through rank interleaving. With a CAS latency of CL13, the module provides efficient data access times, complementing its high speed and capacity. It supports Error-Correcting Code (ECC) functionality, crucial for maintaining data integrity and system stability in mission-critical server environments. Manufactured by Samsung, a leader in memory technology, this 32GB DDR3 LRDIMM ensures reliability and performance for the most demanding server applications.

Condition:Refurbished

Related Products

Loading Related Inventory...