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Samsung M386B4G70BM0-YH930 32GB DDR3-1333MHz LRDIMM 4Rx4 CL9 Memory
- 32GB DDR3 Memory Module
- LRDIMM (Load-Reduced DIMM) form factor
- Speed: DDR3-1333MHz (PC3-10600)
- Rank: 4Rx4 (4 Ranks x 4 bits)
- CAS Latency: CL9
- Voltage: 1.5V
- Designed for servers and high-performance workstations
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Product Overview
The Samsung M386B4G70BM0-YH930 is a 32GB Load-Reduced DIMM (LRDIMM) memory module. It operates at DDR3-1333MHz speed with a 4 ranks x 4 bits organization and CL9 latency.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 32GB |
| Form Factor | LRDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL9 |
| Part Number | M386B4G70BM0-YH930 |
| Manufacturer | Samsung |
Product Description
This Samsung M386B4G70BM0-YH930 memory module offers a substantial 32GB capacity, making it suitable for memory-intensive server applications and high-performance computing environments. As a Load-Reduced DIMM (LRDIMM), it features a memory buffer chip that reduces the electrical load on the memory controller, allowing for higher memory capacities and improved signal integrity, especially in systems with many memory modules. The module operates at a DDR3-1333MHz frequency, providing a balance between performance and compatibility with a wide range of server platforms. The 4Rx4 organization indicates that the memory is arranged in four ranks, each with a 4-bit data width, which can offer performance benefits in certain server architectures. The CL9 CAS latency ensures timely data access, contributing to overall system responsiveness. Engineered for reliability and stability in demanding server environments, this LRDIMM is designed to meet the rigorous requirements of enterprise-grade hardware. Its specifications make it an ideal upgrade for servers requiring increased memory capacity to handle larger datasets, virtualized environments, and complex database operations.



