Home/Memory/Server Memory/Samsung M386B4G70BM0-CMA3 32GB DDR3-1866MHz LRDIMM...
Samsung M386B4G70BM0-CMA3 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory

Safe checkout

Secure payments

Fast dispatch

12 day handling

Free shipping

U.S. ground

Warranty & RMA

Support after delivery

Samsung M386B4G70BM0-CMA3 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory

SKU M386B4G70BM0-CMA3
Brand Samsung
  • Capacity: 32GB
  • Memory Type: DDR3 SDRAM
  • Form Factor: LRDIMM (Load-Reduced DIMM)
  • Speed: PC3-14900 (1866MHz)
  • CAS Latency: CL13
  • Rank: 4Rx4 (Quad Rank x4)
  • ECC: Yes (Error-Correcting Code)
  • Voltage: 1.35V / 1.5V
Available to order

M386B4G70BM0-CMA3 isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.

Key specifications

See full specs ↓
Manufacturer
Samsung
Part Number
M386B4G70BM0-CMA3
Capacity
32GB
Memory Type
DDR3 SDRAM
Speed
1866MHz (PC3-14900)
Form Factor
240-pin LRDIMM

Product details

The Samsung M386B4G70BM0-CMA3 is a 32GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1866MHz with CAS Latency 13, designed for high-capacity server environments requiring maximum memory bandwidth and density.

Technical Information

ManufacturerSamsung
Part NumberM386B4G70BM0-CMA3
Capacity32GB
Memory TypeDDR3 SDRAM
Speed1866MHz (PC3-14900)

Additional Specifications

Form Factor240-pin LRDIMM
CAS LatencyCL13
Error CorrectionECC
Rank4Rx4
Voltage1.35V / 1.5V

Description

The Samsung M386B4G70BM0-CMA3 is a high-capacity 32GB DDR3 Load-Reduced DIMM (LRDIMM) module, engineered for servers and workstations that demand extreme memory density and performance. Operating at a rapid 1866MHz frequency, this module significantly boosts system throughput. LRDIMMs are distinct from standard RDIMMs in that they incorporate a memory buffer chip (an 8-channel buffer) that isolates the memory controller from the memory chips. This buffer reduces the electrical load on the memory controller, enabling systems to support a much larger number of DIMMs and achieve higher total memory capacities than would be possible with RDIMMs. This module features a 4Rx4 configuration, meaning it has four ranks, each composed of memory chips with four data lines. This quad-rank design, combined with the LRDIMM architecture, allows for maximum memory population density on server motherboards. The CAS Latency of CL13 is appropriate for its 1866MHz speed, representing a balance between speed and timing. The module also supports ECC (Error-Correcting Code) to ensure data integrity and system stability, a critical feature for enterprise-level computing. Operating at a lower voltage of 1.35V (and backward compatible with 1.5V), the M386B4G70BM0-CMA3 is designed for power efficiency while delivering top-tier performance. Its substantial 32GB capacity makes it ideal for memory-intensive applications such as large databases, virtualization, scientific simulations, and high-performance computing. Samsung's reputation for quality and reliability ensures that this LRDIMM is a robust choice for critical server infrastructure.

Condition: Refurbished

Free U.S. ground shipping

Typically 12 days handling, 37 days in transit.

Purchase orders accepted

Government, enterprise, data center and small business.

Warranty & RMA support

See warranty and returns.

Buying 10+ units?

Get volume pricing and availability for M386B4G70BM0-CMA3.

Running security check — you can keep filling the form.

Questions about this part?

Compatibility, condition, lead times — ask a specialist.

(888) 988-8093

Related products

Loading related inventory…
Samsung M386B4G70BM0-CMA3 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory | CoreRex