Samsung M386B4G70BM0-CMA3 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory

Product Description

The Samsung M386B4G70BM0-CMA3 is a high-capacity 32GB DDR3 Load-Reduced DIMM (LRDIMM) module, engineered for servers and workstations that demand extreme memory density and performance. Operating at a rapid 1866MHz frequency, this module significantly boosts system throughput. LRDIMMs are distinct from standard RDIMMs in that they incorporate a memory buffer chip (an 8-channel buffer) that isolates the memory controller from the memory chips. This buffer reduces the electrical load on the memory controller, enabling systems to support a much larger number of DIMMs and achieve higher total memory capacities than would be possible with RDIMMs. This module features a 4Rx4 configuration, meaning it has four ranks, each composed of memory chips with four data lines. This quad-rank design, combined with the LRDIMM architecture, allows for maximum memory population density on server motherboards. The CAS Latency of CL13 is appropriate for its 1866MHz speed, representing a balance between speed and timing. The module also supports ECC (Error-Correcting Code) to ensure data integrity and system stability, a critical feature for enterprise-level computing. Operating at a lower voltage of 1.35V (and backward compatible with 1.5V), the M386B4G70BM0-CMA3 is designed for power efficiency while delivering top-tier performance. Its substantial 32GB capacity makes it ideal for memory-intensive applications such as large databases, virtualization, scientific simulations, and high-performance computing. Samsung's reputation for quality and reliability ensures that this LRDIMM is a robust choice for critical server infrastructure.