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Samsung M386B4G70BM0-CMA 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory
- 32GB memory capacity
- DDR3 SDRAM technology
- 1866MHz memory speed
- CL13 CAS Latency
- LRDIMM (Load-Reduced DIMM) form factor
- 4 ranks x 4 bits organization (4Rx4)
- ECC (Error-Correcting Code) support
- Designed for high-density server and workstation applications
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Product Overview
The Samsung M386B4G70BM0-CMA is a 32GB DDR3-1866MHz Load-Reduced DIMM (LRDIMM). It features a 4Rx4 organization and CL13 latency, designed for high-capacity server applications.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 32GB |
| Speed | 1866MHz |
| Latency | CL13 |
Additional Specifications
| Form Factor | LRDIMM |
| Organization | 4Rx4 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
The Samsung M386B4G70BM0-CMA is a high-capacity 32GB DDR3 Load-Reduced DIMM (LRDIMM) module, engineered for demanding server and workstation environments that require substantial memory resources. Operating at a speed of 1866MHz with a CL13 CAS Latency, this module delivers excellent performance for memory-intensive tasks such as virtualization, large-scale data processing, and complex simulations. The LRDIMM architecture is a key feature, providing enhanced signal integrity and allowing for higher memory densities compared to traditional RDIMMs. This makes it an ideal choice for systems that need to maximize memory capacity per channel. The 4Rx4 organization signifies four memory ranks, each with a 4-bit data width per DRAM chip, which contributes to efficient data handling and overall system performance. This memory module includes Error-Correcting Code (ECC) functionality, which is critical for enterprise-level applications. ECC detects and corrects single-bit memory errors, ensuring data integrity and enhancing system stability and reliability. The Samsung M386B4G70BM0-CMA is a robust and scalable memory solution designed to support the most demanding computing workloads.
