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Samsung M386B4G70BM0-YH900 32GB DDR3-1333MHz LRDIMM 4Rx4 CL9 Memory
- Capacity: 32GB
- Memory Type: DDR3 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: PC3-10600 (1333MHz)
- Configuration: 4Rx4 (Quad Rank x4)
- CAS Latency: CL9
- Voltage: 1.5V
- ECC: Yes
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Product Overview
The Samsung M386B4G70BM0-YH900 is a 32GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1333MHz with a 4Rx4 configuration and a CAS Latency (CL) of 9, designed for high-capacity and high-performance server applications.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | LRDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL9 |
| ECC Support | Yes |
Product Description
This Samsung 32GB DDR3 LRDIMM, identified by the SKU M386B4G70BM0-YH900, is engineered for servers requiring maximum memory capacity and performance. It utilizes DDR3 technology and operates at a speed of 1333MHz (PC3-10600), providing significant bandwidth for demanding enterprise workloads. The Load-Reduced DIMM (LRDIMM) architecture incorporates an isolation register between the DRAM devices and the memory controller. This register significantly reduces the electrical load on the memory controller, allowing for higher memory densities and more DIMMs per channel compared to standard RDIMMs. This makes LRDIMMs ideal for systems that need to achieve very high total memory capacities. The module's 4Rx4 configuration indicates a quad-rank module with four data bits per rank. This advanced configuration, combined with the LRDIMM architecture, enables superior memory scalability and performance. With a CAS Latency of CL9, it offers a good balance of speed and responsiveness. As with other server-grade memory, it supports ECC (Error-Correcting Code) for enhanced data integrity and system reliability, crucial for mission-critical applications.
