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Samsung M386B4G70BM0-CMA4Q 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory
- Capacity: 32GB
- Type: DDR3 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 1866MHz (PC3-14900)
- Latency: CL13
- Configuration: 4Rx4 (Quad Rank x4)
- Voltage: 1.5V (typical)
- Designed for servers and workstations
- ECC (Error-Correcting Code) support
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Product Overview
This Samsung 32GB DDR3 LRDIMM memory module is designed for high-performance servers and workstations. It operates at 1866MHz with CL13 latency and features a 4Rx4 configuration for enhanced memory density.
Technical Information
| Capacity | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | LRDIMM |
| Speed | 1866MHz |
Additional Specifications
| CAS Latency | CL13 |
| Rank | 4Rx4 |
| Manufacturer | Samsung |
| Part Number | M386B4G70BM0-CMA4Q |
Product Description
The Samsung M386B4G70BM0-CMA4Q is a 32GB Load-Reduced Dual In-line Memory Module (LRDIMM) engineered for high-performance server and workstation environments. It operates at a speed of 1866MHz (PC3-14900), delivering substantial memory bandwidth crucial for memory-intensive applications. This LRDIMM is specified with a CAS latency of CL13 and utilizes a 4Rx4 (Quad Rank x4) organization. The LRDIMM architecture includes a memory buffer chip, which helps to alleviate the electrical load on the memory controller. This design enables systems to support higher memory capacities and maintain stability, especially in configurations with numerous DIMMs. The 4Rx4 configuration indicates a quad-rank structure with a x4 data interface per rank, potentially offering performance advantages in specific server platforms. This memory module is an excellent choice for enterprise deployments requiring large amounts of memory and dependable performance for tasks such as virtualization, database management, and scientific computing.
