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Samsung M386B4G70BM0-CMA3Q 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory
- Capacity: 32GB
- Memory Type: DDR3 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: PC3-14900 (1866MHz)
- Rank: 4Rx4 (Quad Rank, x4 organization)
- CAS Latency: CL13
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Samsung M386B4G70BM0-CMA3Q is a 32GB DDR3 Load-Reduced DIMM (LRDIMM) module. It is designed for high-performance server environments requiring maximum memory capacity and speed, operating at 1866MHz.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | LRDIMM |
| Speed | 1866MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL13 |
| ECC | Yes |
Product Description
This Samsung 32GB DDR3 LRDIMM, model M386B4G70BM0-CMA3Q, is a high-capacity memory module engineered for enterprise servers that demand the utmost in memory performance and capacity. LRDIMMs are critical for systems requiring very high memory configurations, as they feature an integrated memory buffer that significantly reduces the electrical load on the memory controller. This allows for greater scalability and higher overall system memory, essential for applications such as large-scale virtualization, in-memory databases, and advanced data analytics. The module operates at 1866MHz, providing substantial bandwidth for data-intensive workloads. Its 4Rx4 rank configuration signifies a quad-rank design utilizing x4 data-wide DRAM chips. This advanced architecture maximizes parallelism and memory throughput, enabling servers to efficiently handle the most demanding computational tasks. With integrated ECC (Error-Correcting Code) functionality, this LRDIMM ensures data integrity and system reliability, which are paramount in mission-critical server environments. The CL13 CAS latency offers a balance between performance and power efficiency. This memory module is an ideal choice for servers designed to maximize memory capacity and performance for complex processing and large datasets.
