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Samsung M386ABG40M5B-CYFCQ 256GB DDR4-2933MHz LRDIMM 8Rx4 CL21 Memory

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Samsung M386ABG40M5B-CYFCQ 256GB DDR4-2933MHz LRDIMM 8Rx4 CL21 Memory

SKU M386ABG40M5B-CYFCQ
Brand Samsung
  • 256GB capacity
  • DDR4 SDRAM technology
  • 2933MHz memory speed (PC4-23466)
  • LRDIMM (Load-Reduced DIMM) type
  • 8 ranks x 4 bits per rank (8Rx4)
  • CL21 latency
  • ECC (Error-Correcting Code) support
  • High-performance server memory solution
In Stock
$2,27000

Was $2,670.24 · You save $400.24

Key specifications

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Capacity
256GB
Memory Type
DDR4 SDRAM
Speed
2933MHz
Module Type
LRDIMM
Rank Configuration
8Rx4
CAS Latency
CL21

Product details

The Samsung M386ABG40M5B-CYFCQ is a 256GB DDR4 LRDIMM memory module operating at 2933MHz. It features an 8Rx4 rank configuration and CL21 latency, designed for high-density server applications requiring maximum memory capacity and performance.

Technical Information

Capacity256GB
Memory TypeDDR4 SDRAM
Speed2933MHz
Module TypeLRDIMM

Additional Specifications

Rank Configuration8Rx4
CAS LatencyCL21
Voltage1.2V
ECCYes

Description

The Samsung M386ABG40M5B-CYFCQ is a high-capacity 256GB DDR4 Load-Reduced DIMM (LRDIMM) module, engineered for the most demanding server environments. This module is designed to provide the immense memory resources required for cutting-edge applications such as large-scale in-memory databases, complex scientific simulations, extensive virtualization, and big data analytics. The DDR4 standard ensures superior bandwidth and power efficiency, making it the ideal choice for modern, high-density server deployments. With a clock speed of 2933MHz, this memory module delivers exceptional data throughput, enabling processors to access and process massive datasets with minimal latency. The 8Rx4 rank configuration signifies a highly dense memory architecture, utilizing eight ranks, each composed of four data bits per DRAM chip. This advanced organization maximizes the number of memory banks accessible, leading to significantly enhanced memory bandwidth and parallelism, which is crucial for high-performance server platforms. As an LRDIMM, this module incorporates an integrated buffer chip that effectively isolates the memory controller from the DRAM devices. This reduction in electrical load is critical for enabling systems to support an extremely high number of DIMMs and achieve massive total memory capacities per channel. This capability is essential for servers designed to handle petabytes of data or host hundreds of virtual machines. The inclusion of ECC (Error-Correcting Code) is a standard feature for server-grade memory, providing vital data integrity by detecting and correcting memory errors, thereby ensuring the reliability of mission-critical operations. The CL21 latency is consistent with DDR4 memory operating at 2933MHz, and the module's overall performance is primarily defined by its extraordinary capacity and high frequency.

Condition: Refurbished

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