Samsung M386ABG40M5B-CYFCQ 256GB DDR4-2933MHz LRDIMM 8Rx4 CL21 Memory

Product Description

The Samsung M386ABG40M5B-CYFCQ is a high-capacity 256GB DDR4 Load-Reduced DIMM (LRDIMM) module, engineered for the most demanding server environments. This module is designed to provide the immense memory resources required for cutting-edge applications such as large-scale in-memory databases, complex scientific simulations, extensive virtualization, and big data analytics. The DDR4 standard ensures superior bandwidth and power efficiency, making it the ideal choice for modern, high-density server deployments. With a clock speed of 2933MHz, this memory module delivers exceptional data throughput, enabling processors to access and process massive datasets with minimal latency. The 8Rx4 rank configuration signifies a highly dense memory architecture, utilizing eight ranks, each composed of four data bits per DRAM chip. This advanced organization maximizes the number of memory banks accessible, leading to significantly enhanced memory bandwidth and parallelism, which is crucial for high-performance server platforms. As an LRDIMM, this module incorporates an integrated buffer chip that effectively isolates the memory controller from the DRAM devices. This reduction in electrical load is critical for enabling systems to support an extremely high number of DIMMs and achieve massive total memory capacities per channel. This capability is essential for servers designed to handle petabytes of data or host hundreds of virtual machines. The inclusion of ECC (Error-Correcting Code) is a standard feature for server-grade memory, providing vital data integrity by detecting and correcting memory errors, thereby ensuring the reliability of mission-critical operations. The CL21 latency is consistent with DDR4 memory operating at 2933MHz, and the module's overall performance is primarily defined by its extraordinary capacity and high frequency.