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Samsung M386ABG40M5B-CYF 256GB DDR4-2933MHz LRDIMM 8Rx4 CL21 Memory
- 256GB capacity
- DDR4 SDRAM technology
- 2933MHz memory speed (PC4-23466)
- LRDIMM (Load-Reduced DIMM) type
- 8 ranks x 4 bits per rank (8Rx4)
- CL21 latency
- ECC (Error-Correcting Code) support
- Ideal for extreme memory-intensive server applications
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Product Overview
The Samsung M386ABG40M5B-CYF is a high-capacity 256GB DDR4 LRDIMM memory module. It operates at 2933MHz, providing extensive bandwidth for demanding server and workstation applications. This module features an 8Rx4 rank configuration and CL21 latency, designed for environments requiring maximum memory density and performance.
Technical Information
| Capacity | 256GB |
| Memory Type | DDR4 SDRAM |
| Speed | 2933MHz |
| Module Type | LRDIMM |
Additional Specifications
| Rank Configuration | 8Rx4 |
| CAS Latency | CL21 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
The Samsung M386ABG40M5B-CYF represents the pinnacle of server memory capacity, offering a massive 256GB on a single DDR4 LRDIMM module. This module is engineered for the most extreme memory-intensive applications, such as large-scale in-memory databases, advanced scientific simulations, massive data warehousing, and high-performance computing clusters where the sheer volume of RAM is a primary performance bottleneck. The DDR4 standard ensures high bandwidth and improved power efficiency, crucial for large server deployments. Operating at a robust 2933MHz, this memory module provides exceptional data transfer rates, enabling processors to access and process vast datasets with minimal delay. The 8Rx4 rank configuration is a highly dense memory organization, utilizing eight ranks, each with four data bits per DRAM chip. This configuration maximizes the number of memory banks available, allowing for greater parallelism and significantly boosting memory throughput, which is essential for high-end server platforms. As a Load-Reduced DIMM (LRDIMM), this module incorporates an integrated buffer chip. This buffer isolates the memory controller from the DRAM devices, reducing the electrical load and enabling systems to support an unprecedented number of DIMMs and total memory capacity per channel. This capability is vital for servers designed to handle petabytes of data or run hundreds of virtual machines. The inclusion of ECC (Error-Correcting Code) is standard for server memory, providing critical data integrity by detecting and correcting memory errors, ensuring the reliability of mission-critical operations. The CL21 latency is typical for DDR4 memory at this speed, and the overall performance is dominated by its immense capacity and high frequency.


