Samsung M386B4G70BM0-YK0 32GB DDR3-1600MHz LRDIMM 4Rx4 CL11 Memory

Product Description

The Samsung M386B4G70BM0-YK0 is a high-density 32GB DDR3 Load-Reduced DIMM (LRDIMM) memory module, specifically engineered for servers that require maximum memory capacity. Operating at 1600MHz (PC3-12800), it provides substantial bandwidth for demanding server applications. LRDIMMs are designed to reduce the electrical load on the memory controller by using an additional buffer chip on the module. This allows servers to support significantly higher memory capacities and more memory modules per channel compared to standard RDIMMs or UDIMMs. This module features a 4Rx4 organization, indicating it is quad-ranked with four memory chips per rank. The quad-rank design, combined with the load-reducing buffer, is key to achieving very high capacities like 32GB on a single DDR3 module. With a CAS Latency (CL) of 11, it offers a standard timing for DDR3 memory at this speed, balancing performance with stability. The operating voltage is 1.5V, typical for DDR3 technology. As an ECC (Error-Correcting Code) memory module, the M386B4G70BM0-YK0 provides enhanced data integrity by detecting and correcting memory errors. This is critical for server environments where data accuracy and system uptime are paramount. The 240-pin connector is standard for DDR3 DIMMs. This Samsung LRDIMM is an ideal choice for memory-intensive server applications such as large databases, virtualization hosts, high-performance computing, and in-memory analytics where maximizing RAM is essential.