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Micron MT18KSF51272PDZ-1G4H1 4GB DDR3-1333MHz RDIMM 2Rx8 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: PC3-10600 (1333MHz)
- Configuration: 2Rx8 (Dual Rank x8)
- CAS Latency: CL9
- Voltage: 1.5V
- ECC: Yes
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Product Overview
The Micron MT18KSF51272PDZ-1G4H1 is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1333MHz with a 2Rx8 configuration and a CAS Latency (CL) of 9, designed for server and workstation applications.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL9 |
| ECC Support | Yes |
Product Description
This Micron 4GB DDR3 RDIMM, identified by the SKU MT18KSF51272PDZ-1G4H1, is a high-quality memory module suitable for server and workstation platforms. It provides 4GB of memory capacity, utilizing DDR3 technology for efficient data handling. The module operates at a frequency of 1333MHz, offering a good balance of performance and power efficiency for demanding computing tasks. The Registered DIMM (RDIMM) design incorporates an onboard register that buffers command and address signals. This feature reduces the electrical load on the memory controller, enabling greater system stability and support for higher memory capacities. The 2Rx8 configuration indicates a dual-rank module with eight data bits per rank, which can enhance performance through rank interleaving, allowing the memory controller to access different ranks concurrently. With a CAS Latency of CL9, this memory module provides a responsive performance profile. It is designed for compatibility with systems that support DDR3 RDIMMs and operate at 1333MHz. The inclusion of ECC (Error-Correcting Code) is a standard feature for server-grade memory, providing enhanced data integrity by detecting and correcting memory errors, which is critical for mission-critical applications and maintaining system uptime.



