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Micron MT18KSF51272PDZ-1G4D 4GB DDR3-1333MHz PC3-10600 ECC Registered CL9 240-Pin RDIMM 1.35V Low Vo...
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600)
- Form Factor: 240-Pin RDIMM (Registered DIMM)
- Error Correction: ECC (Error-Correcting Code)
- Voltage: 1.35V (Low Voltage)
- CAS Latency: CL9
- Rank: Dual Rank (2Rx8 implied by '51272')
- Designed for server and workstation applications
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Product Overview
The Micron MT18KSF51272PDZ-1G4D is a 4GB DDR3 ECC Registered DIMM (RDIMM) operating at 1333MHz (PC3-10600). It is designed for servers and workstations requiring reliable, error-corrected memory.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Module Type | RDIMM |
Additional Specifications
| ECC | Yes |
| Voltage | 1.35V |
| CAS Latency | CL9 |
| Pin Count | 240-Pin |
Product Description
The Micron MT18KSF51272PDZ-1G4D is a high-quality 4GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. It operates at a speed of 1333MHz, corresponding to a PC3-10600 data transfer rate, and features ECC (Error-Correcting Code) functionality. ECC memory is crucial in server and workstation environments as it detects and corrects single-bit errors in real-time, preventing data corruption and system crashes that could occur with unbuffered memory. This module is a Registered DIMM (RDIMM), which includes an onboard register to buffer address and command signals, reducing electrical load on the memory controller and allowing for higher memory capacities and speeds. This specific module operates at a low voltage of 1.35V, classifying it as a Low Voltage DDR3 module (often referred to as DDR3L). This lower voltage contributes to reduced power consumption and heat generation, which are significant considerations in densely populated server racks. The CAS Latency (CL) is rated at 9, indicating the number of clock cycles it takes for the memory to respond to a column address command. The '51272' in the part number typically indicates a configuration of 512 Megabits x 72 bits, which, when combined with ECC, results in a 4GB capacity (512M x 8 bits per chip x 8 chips = 4Gbits = 512MB per chip, and 512MB x 8 chips = 4GB). The '2' in '51272' often implies dual rank configuration. Designed for compatibility with servers and high-end workstations that support DDR3 RDIMMs, this Micron memory module is built for reliability and performance. Its combination of ECC, registered buffering, low voltage operation, and a 1333MHz speed makes it a robust choice for mission-critical applications, virtualization, large databases, and scientific computing where memory stability and integrity are paramount. Always verify system compatibility for DDR3 RDIMMs, specific speeds, and voltage requirements before installation.
