Micron MT18KSF51272PDZ-1G4D1BB 4GB DDR3-1333MHz RDIMM 2Rx8 CL9 Memory

Product Description

The Micron MT18KSF51272PDZ-1G4D1BB is a 4 Gigabyte (GB) DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. Designed for server and workstation environments, this module is an RDIMM (Registered DIMM), which includes a register chip that buffers the electrical load between the memory controller and the DRAM modules. This buffering reduces electrical stress on the memory controller, allowing for higher memory capacities and improved signal integrity, which is crucial for system stability in memory-intensive applications. Operating at a speed of 1333MHz (also known as PC3-10600), this memory module provides a substantial bandwidth for data processing. It features a CAS Latency (CL) of 9, indicating the number of clock cycles it takes for the memory to respond to a column address command. The 2Rx8 configuration signifies that the module is dual-ranked, with each rank utilizing eight memory chips (x8 data width). Dual-rank modules can offer performance benefits in certain scenarios by allowing the memory controller to access data from different ranks concurrently. This Micron RDIMM is also equipped with Error-Correcting Code (ECC) functionality. ECC memory can detect and correct common types of internal data corruption, significantly enhancing data reliability and system stability, which is a standard requirement for mission-critical server operations. The combination of capacity, speed, ECC support, and registered architecture makes the MT18KSF51272PDZ-1G4D1BB a suitable choice for upgrading or populating memory in compatible server platforms.