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Micron MT18KSF51272PDZ-1G4D1DD 4GB DDR3-1333MHz RDIMM 2Rx8 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: PC3-10600 (1333MHz)
- Configuration: 2Rx8 (Dual Rank x8)
- CAS Latency: CL9
- Voltage: 1.5V
- ECC: Yes
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Product Overview
The Micron MT18KSF51272PDZ-1G4D1DD is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1333MHz with a 2Rx8 configuration and a CAS Latency (CL) of 9, suitable for server and workstation applications requiring reliable memory.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL9 |
| ECC Support | Yes |
Product Description
This Micron 4GB DDR3 RDIMM is designed to provide reliable and efficient memory performance for server and workstation environments. The module operates at a speed of 1333MHz (PC3-10600), offering a solid balance of bandwidth and latency for a wide range of applications. The Registered DIMM (RDIMM) architecture includes an onboard register that buffers address and command signals, reducing the electrical load on the memory controller and enabling greater system stability and higher memory capacities. The 2Rx8 organization signifies that the module is dual-rank, with each rank composed of eight data bits. This configuration can contribute to improved performance through rank interleaving, where the memory controller can switch between ranks to optimize data access. The CAS Latency of CL9 indicates the number of clock cycles required for data retrieval, representing a standard performance level for DDR3 memory at this speed. As a server-grade component, this RDIMM typically supports ECC (Error-Correcting Code) functionality. ECC memory is crucial for maintaining data integrity in critical applications by detecting and correcting single-bit errors. This module is an ideal choice for upgrading or populating systems that require dependable, error-corrected memory.
