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Micron MT18KSF51272PDZ-1G6K 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1600MHz (PC3-12800)
- Rank: 2Rx8 (Dual Rank x8)
- CAS Latency: CL11
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Key specifications
See full specs ↓- Memory Size
- 4GB
- Memory Type
- DDR3 SDRAM
- Memory Speed
- 1600MHz
- Form Factor
- RDIMM
- Rank
- 2Rx8
- CAS Latency
- CL11
Product details
The Micron MT18KSF51272PDZ-1G6K is a 4GB DDR3 RDIMM memory module operating at 1600MHz with a CAS latency of CL11. It is designed for servers and workstations requiring reliable memory performance.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1600MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL11 |
| Voltage | 1.5V |
| ECC | Yes |
Description
This Micron 4GB DDR3 RDIMM, model MT18KSF51272PDZ-1G6K, is a standard memory module designed for use in server and workstation environments. It adheres to the DDR3 SDRAM standard, providing a solid foundation for computing tasks that require dependable memory operations. The module is configured as 2Rx8, indicating it is dual-ranked with each rank utilizing an x8 data interface. This configuration is common and offers a good balance of performance and density for many server applications. The 1600MHz speed, also referred to as PC3-12800, delivers adequate bandwidth for general-purpose server workloads and multitasking. With a CAS Latency (CL) of 11, the module ensures efficient data access times. As an RDIMM (Registered DIMM), it incorporates an onboard register that buffers command and address signals, reducing the electrical load on the memory controller. This feature is crucial for systems that require a large number of memory modules or higher memory capacities. The inclusion of ECC (Error-Correcting Code) is vital for maintaining data integrity and system stability, making it suitable for critical server operations.
Condition: Refurbished
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