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Samsung M386B4G70DM0-YK04 32GB DDR3-1600MHz LRDIMM 4Rx4 CL11 Memory
- 32GB DDR3 LRDIMM memory module
- Operating Speed: 1600MHz (PC3-12800)
- CAS Latency: CL11
- Rank Configuration: 4Rx4 (Quad Rank x4)
- Voltage: 1.5V
- ECC Registered (LRDIMM)
- Designed for servers and high-performance workstations
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Typically 1-2 handling + 3-7 transit days
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For government, enterprise, data center, and small business customers.
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Product Overview
The Samsung M386B4G70DM0-YK04 is a high-performance 32GB DDR3 LRDIMM memory module designed for server and workstation environments. It operates at a speed of 1600MHz with a CAS latency of CL11, offering robust data throughput and system responsiveness. This module features a 4Rx4 rank configuration, making it suitable for demanding enterprise applications requiring significant memory capacity and reliability.
Technical Information
| Capacity | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | LRDIMM |
| Speed | 1600MHz |
Additional Specifications
| CAS Latency | CL11 |
| Rank | 4Rx4 |
| ECC | Registered ECC |
Product Description
The Samsung M386B4G70DM0-YK04 is engineered to meet the rigorous demands of modern data centers and professional computing environments. As a Load-Reduced Dual In-line Memory Module (LRDIMM), it offers enhanced memory capacity and improved signal integrity, particularly beneficial in systems populated with a high number of memory modules. This design helps to reduce the electrical load on the memory controller, enabling greater scalability and stability. With a substantial 32GB capacity, this module is ideal for memory-intensive applications such as large-scale virtualization, complex database management, high-performance computing (HPC), and advanced data analytics. The DDR3 technology, operating at 1600MHz, provides a significant bandwidth advantage over older memory standards, ensuring that processors can access data quickly and efficiently. The CL11 latency rating indicates a precise timing for memory operations, contributing to overall system performance. The 4Rx4 configuration signifies that each memory module is composed of four ranks, with each rank having four data bits per chip. This quad-rank design allows for higher density and can improve performance in certain server architectures by enabling more simultaneous memory accesses. The registered ECC (Error-Correcting Code) functionality ensures data integrity by detecting and correcting single-bit errors, which is critical for maintaining system uptime and preventing data corruption in mission-critical applications.
