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Samsung M386B4G70DM0-CMA4M 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory
- 32GB DDR3 Low-Voltage Registered DIMM (LRDIMM)
- Memory Speed: 1866MHz (PC3-14900)
- CAS Latency: CL13
- Rank: 4Rx4 (Quad Rank x4)
- ECC: Yes (Error-Correcting Code)
- Voltage: 1.35V (Low Voltage)
- Form Factor: 240-pin DIMM
- Designed for servers and workstations
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Typically 1-2 handling + 3-7 transit days
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For government, enterprise, data center, and small business customers.
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Product Overview
This Samsung 32GB DDR3 LRDIMM memory module is designed for high-performance server and workstation environments. It operates at a speed of 1866MHz with a CAS latency of CL13, offering efficient data processing.
Technical Information
| Capacity | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | LRDIMM |
| Speed | 1866MHz |
Additional Specifications
| Latency | CL13 |
| Rank | 4Rx4 |
| Voltage | 1.35V |
Product Description
The Samsung M386B4G70DM0-CMA4M is a high-density 32GB LRDIMM module engineered to meet the demanding requirements of modern enterprise computing. Its DDR3 technology, combined with a 1866MHz clock speed, ensures rapid data transfer rates essential for memory-intensive applications and virtualization. The module features a 4Rx4 configuration, indicating four ranks of memory with four data bits per rank, which can enhance performance and efficiency in compatible systems. The LRDIMM (Load-Reduced DIMM) design incorporates a memory buffer chip, reducing the electrical load on the memory controller and allowing for higher memory capacities and improved signal integrity, particularly in multi-processor configurations. With Error-Correcting Code (ECC) capabilities, this memory module can detect and correct single-bit errors, crucial for maintaining data integrity and system stability in critical server environments. The low voltage operation (1.35V) also contributes to reduced power consumption and heat generation, aligning with the energy-efficiency goals of data centers.
