Samsung M386B4G70DM0-YH9 32GB DDR3-1333MHz LRDIMM 4Rx4 CL9 Memory

Product Description

The Samsung M386B4G70DM0-YH9 is a high-capacity 32GB Load-Reduced Dual In-line Memory Module (LRDIMM) engineered for server and enterprise-level computing environments. This module utilizes DDR3 SDRAM technology, operating at a frequency of 1333MHz, which translates to a data transfer rate suitable for memory-intensive tasks. The LRDIMM form factor is crucial for systems requiring large amounts of memory, as it incorporates a memory buffer chip that reduces the electrical load on the memory controller, allowing for higher module densities and more memory channels to be populated. This specific module is configured as 4Rx4, indicating it is a Quad Rank module with each rank composed of x4 (4-bit wide) DRAM chips. This configuration offers a higher density and can sometimes provide performance benefits in specific workloads by allowing the memory controller to access different ranks in a staggered fashion. The CAS Latency (CL) is rated at 9, meaning there are 9 clock cycles between the memory controller issuing a read command and the data becoming available from the DRAM. This CL9 timing, combined with the 1333MHz speed, provides a balanced performance profile for a wide range of server applications. As a Registered DIMM (RDIMM), the M386B4G70DM0-YH9 includes onboard registers that buffer address and command signals, further reducing the load on the memory controller and improving signal integrity. This is essential for maintaining stability in systems with many memory modules installed. The ECC (Error-Correcting Code) functionality is standard on server-grade memory, allowing the system to detect and correct single-bit errors on the fly, thereby enhancing data reliability and system uptime. This 32GB DDR3 LRDIMM is an ideal upgrade for servers needing to boost their memory capacity and performance for virtualization, database management, or complex data analysis.