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Samsung M386B4G70DM0-CMA30 32GB DDR3-1866MHz LRDIMM 4Rx4 CL13 Memory
- Capacity: 32GB
- Type: DDR3 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 1866MHz (PC3-14900R)
- CAS Latency: CL13
- Rank: 4Rx4 (Quad Rank, x4 organization)
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Samsung M386B4G70DM0-CMA30 is a 32GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1866MHz with a CAS latency of CL13, designed for high-capacity server and workstation applications requiring enhanced memory performance and stability.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1866MHz |
| Form Factor | LRDIMM |
Additional Specifications
| CAS Latency | CL13 |
| ECC | Registered ECC |
| Rank | 4Rx4 |
| Voltage | 1.5V |
Product Description
The Samsung M386B4G70DM0-CMA30 is a high-density 32GB DDR3 memory module engineered for demanding server and workstation environments. This module utilizes Load-Reduced DIMM (LRDIMM) technology, which incorporates a memory buffer chip. This buffer reduces the electrical load on the memory controller, allowing for higher memory capacities per channel and improved signal integrity, especially in systems populated with many memory modules. Operating at a speed of 1866MHz, this module provides substantial bandwidth for data-intensive applications. The CAS Latency (CL) is rated at 13, indicating the number of clock cycles required for the memory to respond to a column address command. The 4Rx4 rank configuration signifies that the module is organized into four ranks, each with a data width of 4 bits, which can contribute to higher performance in specific memory access scenarios. Like most server-grade memory, it also features Error-Correcting Code (ECC) to detect and correct memory errors, ensuring system stability and data integrity. This Samsung LRDIMM is an ideal choice for servers running virtualization, large databases, high-performance computing (HPC) workloads, or any application that requires significant amounts of memory. The 32GB capacity per module allows for massive total memory configurations, crucial for modern enterprise computing needs. The standard 1.5V operating voltage is typical for DDR3 memory.



