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Micron MT18HTF12872FY-53ED5E3 1GB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- Memory Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Capacity: 1 GB
- Speed: 533 MHz (PC2-4200)
- Organization: 1Rx8 (Single Rank x8)
- Latency: CL4
- Voltage: 1.8V
- Features: Advanced Error Detection and Correction, On-die Termination (ODT)
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Product Overview
The Micron MT18HTF12872FY-53ED5E3 is a 1GB DDR2-533MHz FB-DIMM memory module. It features an 8n-bit prefetch architecture and CL4 latency.
Technical Information
| Product Type | Memory Module |
| Memory Technology | DDR2 SDRAM |
| Capacity | 1 GB |
| Speed | 533 MHz |
| Form Factor | FB-DIMM |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL4 |
| Voltage | 1.8V |
| Manufacturer | Micron |
Product Description
The Micron MT18HTF12872FY-53ED5E3 is a high-performance 1 Gigabyte (GB) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module. It utilizes the Fully Buffered DIMM (FB-DIMM) form factor, which incorporates an Advanced Memory Buffer (AMB) chip on the module itself. This AMB chip serializes data, reducing the pin count and improving signal integrity, making it suitable for high-density server and workstation applications. This memory module operates at a clock speed of 533 MHz, corresponding to a PC2-4200 designation, and features a CAS Latency (CL) of 4. The organization is 1Rx8, indicating a single rank with an 8-bit data width per chip. The standard operating voltage for DDR2 FB-DIMMs is 1.8V. The FB-DIMM architecture enhances memory scalability and performance by offloading signaling tasks from the memory controller. Designed for demanding computing environments, the MT18HTF12872FY-53ED5E3 provides increased memory bandwidth and capacity for servers, workstations, and high-end computing systems. Its robust design and advanced features contribute to system stability and reliability, making it a suitable choice for memory upgrades or new system builds requiring high-speed, high-capacity DDR2 memory.
