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Micron MT18HTF12872FY-53EB5D3 1GB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- Capacity: 1GB
- Type: DDR2 FB-DIMM (Fully Buffered DIMM)
- Speed: 533MHz
- Rank: 1Rx8 (Single Rank, x8 organization)
- CAS Latency: CL4
- Voltage: 1.8V
- ECC: Yes
- Form Factor: FB-DIMM
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Product Overview
The Micron MT18HTF12872FY-53EB5D3 is a 1GB DDR2 FB-DIMM memory module. It operates at 533MHz with a CAS latency of 4, suitable for servers and workstations needing reliable memory performance.
Technical Information
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Capacity | 1 GB |
| Speed | 533 MHz |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL4 |
| ECC | Yes |
Product Description
This Micron 1GB DDR2 FB-DIMM, part number MT18HTF12872FY-53EB5D3, is a memory module designed for server and workstation platforms that utilize the Fully Buffered DIMM (FB-DIMM) technology. FB-DIMMs incorporate an Advanced Memory Buffer (AMB) chip on each module, which buffers command and address signals. This design isolates the memory controller from the electrical load of multiple DIMMs, enabling higher memory capacities and improved signal integrity, which are critical for dense server configurations. The module operates at a frequency of 533MHz, offering a solid performance level for DDR2 memory systems. The 1Rx8 configuration signifies a single-rank design with an x8 data width per chip. While single-rank modules might offer slightly less performance in certain scenarios compared to dual-rank modules, they are often chosen for their cost-effectiveness and suitability for specific system architectures. With a CAS latency of CL4, this FB-DIMM provides relatively fast response times for memory operations. The inclusion of ECC (Error-Correcting Code) functionality is a standard and essential feature for server-grade memory, ensuring data integrity by detecting and correcting memory errors. The MT18HTF12872FY-53EB5D3 is a reliable component for maintaining system stability and data accuracy in demanding computing environments.



