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Micron MT18HTF12872FY-53EB5E3 1GB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- Capacity: 1GB
- Type: DDR2 FB-DIMM (Fully Buffered DIMM)
- Speed: 533MHz
- Rank: 1Rx8 (Single Rank, x8 organization)
- CAS Latency: CL4
- Voltage: 1.8V
- ECC: Yes
- Form Factor: FB-DIMM
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Product Overview
The Micron MT18HTF12872FY-53EB5E3 is a 1GB DDR2 FB-DIMM memory module. It operates at 533MHz with a CAS latency of 4, designed for server applications requiring stable and error-corrected memory.
Technical Information
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Capacity | 1 GB |
| Speed | 533 MHz |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL4 |
| ECC | Yes |
Product Description
This Micron 1GB DDR2 FB-DIMM, identified by the SKU MT18HTF12872FY-53EB5E3, is a memory module engineered for server and workstation systems that employ the Fully Buffered DIMM (FB-DIMM) architecture. FB-DIMM technology utilizes an Advanced Memory Buffer (AMB) chip on each module to manage command and address signals. This buffer effectively reduces the electrical load on the memory controller, enabling higher memory densities and improved signal integrity, which are crucial for high-performance computing environments. The module operates at a frequency of 533MHz, providing a standard performance level for DDR2 memory. The 1Rx8 designation indicates a single-rank configuration with an x8 data width per memory chip. Single-rank modules are often chosen for their cost-effectiveness and compatibility with a wide range of system designs, offering reliable performance for everyday server tasks. Featuring a CAS latency of CL4, this FB-DIMM ensures timely data retrieval. The integrated ECC (Error-Correcting Code) functionality is a critical feature for server environments, as it actively detects and corrects memory errors, thereby enhancing system stability and data reliability. The MT18HTF12872FY-53EB5E3 is a dependable choice for maintaining the integrity and performance of critical server applications.



