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Micron MT18HTF12872FDZ-667G1N8 1GB DDR2-667MHz FB-DIMM 2Rx8 CL5 Memory
- Capacity: 1GB
- Type: DDR2 FB-DIMM (Fully Buffered DIMM)
- Speed: 667MHz
- Rank: 2Rx8 (Dual Rank, x8 organization)
- CAS Latency: CL5
- Voltage: 1.8V
- ECC: Yes
- Form Factor: FB-DIMM
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Product Overview
The Micron MT18HTF12872FDZ-667G1N8 is a 1GB DDR2 FB-DIMM memory module. It operates at 667MHz with a CAS latency of 5, designed for servers and workstations requiring high memory bandwidth.
Technical Information
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Capacity | 1 GB |
| Speed | 667 MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL5 |
| ECC | Yes |
Product Description
This Micron 1GB DDR2 FB-DIMM memory module, identified by the part number MT18HTF12872FDZ-667G1N8, is specifically designed for server and workstation environments that utilize the FB-DIMM architecture. FB-DIMMs were developed to overcome the limitations of traditional DIMMs by introducing an Advanced Memory Buffer (AMB) chip on each module. This buffer handles command and address signals, effectively isolating the memory controller from the electrical load of multiple DIMMs, thereby enabling higher memory densities and speeds. The module operates at a frequency of 667MHz, providing a substantial bandwidth for its generation of DDR2 memory. The 2Rx8 configuration indicates a dual-rank design, where each rank has an x8 data width, allowing for improved performance through parallel access to memory chips. This configuration is beneficial for systems that require efficient multitasking and rapid data processing. With a CAS latency of CL5, this FB-DIMM offers a balance between speed and timing, ensuring reliable operation within compatible systems. The inclusion of ECC (Error-Correcting Code) is crucial for server environments, as it detects and corrects single-bit memory errors, preventing data corruption and system crashes. This makes the MT18HTF12872FDZ-667G1N8 a dependable component for mission-critical applications.



