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Samsung M393B5170GB0-CH9Q9 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600)
- Latency: CL9
- Rank: 2Rx4 (Dual Rank x4)
- Voltage: 1.5V (Standard for DDR3)
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Product Overview
The Samsung M393B5170GB0-CH9Q9 is a 4GB DDR3 RDIMM memory module. It operates at a speed of 1333MHz with CL9 timings, designed to enhance the performance of compatible servers and workstations.
Technical Information
| Capacity | 4 GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
Additional Specifications
| Speed | 1333 MHz |
| CAS Latency | CL9 |
| Rank | 2Rx4 |
Product Description
The Samsung M393B5170GB0-CH9Q9 is a high-quality 4GB Registered Dual In-line Memory Module (RDIMM) designed for server and workstation environments. This module utilizes DDR3 SDRAM technology, operating at a frequency of 1333MHz, which translates to a bandwidth of PC3-10600. The registered nature of the DIMM helps to reduce electrical load on the memory controller, allowing for greater stability and the ability to populate more memory modules in a system. With a CAS Latency (CL) of 9, this memory module offers a balance between speed and responsiveness. The 2Rx4 configuration indicates that it is a dual-rank module with four data bits per chip, which can sometimes offer performance advantages in certain memory access patterns. This configuration is common in enterprise-grade memory modules designed for demanding computing tasks. This specific Samsung memory module is ideal for upgrading or populating servers and workstations that support DDR3 RDIMMs. It is crucial to ensure system compatibility with the memory type, speed, and rank configuration before installation. The M393B5170GB0-CH9Q9 is built to Samsung's stringent quality standards, ensuring reliability and performance for critical applications and continuous operation.


