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Samsung M393B5170GB0-CH909 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM
- Speed: 1333MHz
- Rank: 2Rx4
- CAS Latency: CL9
- ECC: Registered ECC
- Voltage: 1.5V
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Product Overview
This Samsung 4GB DDR3 RDIMM memory module operates at 1333MHz with a 2Rx4 rank configuration and CL9 latency. It is designed for server applications requiring reliable data integrity and efficient performance.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| ECC | Registered ECC |
Product Description
The Samsung M393B5170GB0-CH909 is a 4GB DDR3 Registered DIMM (RDIMM) module, designed to meet the demands of server and enterprise environments. It operates at a speed of 1333MHz, providing sufficient bandwidth for a variety of computing tasks. The 2Rx4 rank configuration signifies a dual-rank design where each rank utilizes x4 data width, which can contribute to improved performance and efficiency in memory-intensive applications by allowing for more parallel access to memory chips. This module features Registered ECC (Error-Correcting Code) memory, a critical component for servers and workstations where data integrity is paramount. ECC technology can detect and correct common memory errors, thereby enhancing system stability and preventing data corruption. The RDIMM form factor includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory densities and improved signal integrity, which is essential for reliable operation in demanding systems. With a CAS Latency (CL) of 9, this memory module offers a good balance between operational speed and timing precision. The DDR3 standard is a well-established memory technology, ensuring compatibility with a wide array of server motherboards and chipsets. The M393B5170GB0-CH909 is a reliable choice for upgrading server memory capacity or for building new systems that require robust, error-protected memory.



