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Samsung M393B5170GB0-CH908 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM
- Speed: 1333MHz
- Rank: 2Rx4
- CAS Latency: CL9
- ECC: Registered ECC
- Voltage: 1.5V
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Product Overview
This Samsung 4GB DDR3 RDIMM memory module operates at 1333MHz, featuring a 2Rx4 rank configuration and CL9 latency. It is designed for server applications requiring reliable data integrity and efficient performance.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| ECC | Registered ECC |
Product Description
The Samsung M393B5170GB0-CH908 is a 4GB DDR3 Registered DIMM (RDIMM) module, engineered to deliver reliable performance for server and workstation environments. Operating at a frequency of 1333MHz, it offers a solid foundation for memory-intensive tasks and multitasking capabilities. The module's 2Rx4 configuration indicates a dual-rank design with x4 data width per rank, which can enhance performance by allowing the memory controller to access different parts of the memory more efficiently. This RDIMM incorporates Error-Correcting Code (ECC) functionality, a critical feature for servers that demand high data integrity. ECC memory can detect and correct single-bit errors on the fly, preventing data corruption and system crashes that could arise from memory faults. The registered nature of the DIMM means it includes a register chip that buffers address and command signals, reducing the electrical load on the memory controller and enabling support for larger memory capacities and improved system stability. With a CAS Latency (CL) of 9, this module strikes a balance between speed and timing, ensuring efficient data access. The DDR3 technology provides a mature and widely supported memory standard, making this module compatible with a broad range of server platforms. The M393B5170GB0-CH908 is a dependable choice for upgrading existing server memory or for building new systems that require robust, error-checked memory.



