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Samsung M393B2G70QH0-YK009 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM
- Speed: 1600MHz (PC3-12800)
- Rank: 2Rx4 (Dual Rank x4)
- CAS Latency: CL11
- Voltage: 1.5V
- ECC: Registered ECC
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Product Overview
The Samsung M393B2G70QH0-YK009 is a 16GB DDR3 Registered DIMM (RDIMM) memory module operating at 1600MHz. It features a 2Rx4 configuration and CL11 latency, designed for enhanced performance and reliability in server environments.
Technical Information
| Memory Size | 16GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1600MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL11 |
| Voltage | 1.5V |
| ECC | Registered ECC |
Product Description
The Samsung M393B2G70QH0-YK009 is a 16GB DDR3 Registered DIMM (RDIMM) memory module, engineered to deliver robust performance and stability for demanding server applications. With a speed of 1600MHz (PC3-12800) and a CAS Latency of CL11, it facilitates efficient data processing and multitasking, crucial for environments such as data centers, cloud computing, and high-performance computing. The module's 2Rx4 configuration indicates a dual-rank design with four data bits per DRAM chip, which helps to increase memory bandwidth and improve overall system responsiveness. The RDIMM architecture incorporates an onboard register that buffers address and command signals, reducing the electrical load on the memory controller and enabling support for larger memory configurations and enhanced system stability. This design is particularly beneficial in servers where memory density and reliability are paramount. Equipped with Error-Correcting Code (ECC) capabilities, this memory module can detect and correct common memory errors, thereby safeguarding data integrity and minimizing system downtime. The standard 1.5V operating voltage ensures compatibility with a wide range of DDR3 server platforms. The Samsung M393B2G70QH0-YK009 is a reliable choice for upgrading or populating servers that require substantial and dependable memory resources.
