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Samsung M393B2G70QH0-YK008 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: PC3-12800 (1600MHz)
- Configuration: 2Rx4 (Dual Rank x4)
- CAS Latency: CL11
- Voltage: 1.5V
- ECC: Yes
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Product Overview
The Samsung M393B2G70QH0-YK008 is a 16GB DDR3 Registered DIMM (RDIMM) memory module operating at 1600MHz. It features a 2Rx4 configuration and a CAS Latency (CL) of 11, identical in core specifications to other modules with similar part numbers but potentially different revision or manufacturing details.
Technical Information
| Memory Size | 16GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1600MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL11 |
| ECC Support | Yes |
Product Description
This Samsung 16GB DDR3 RDIMM, identified by the SKU M393B2G70QH0-YK008, is a high-performance memory module designed for server environments. It operates at a speed of 1600MHz, providing ample bandwidth for demanding applications and multitasking. The Registered DIMM (RDIMM) architecture includes an onboard register that helps to reduce the electrical load on the memory controller, enabling greater stability and support for larger memory configurations. The module's 2Rx4 organization means it is dual-rank with four data bits per rank. This configuration can enhance performance by allowing the memory controller to interleave accesses between the two ranks, potentially improving throughput. The CAS Latency of CL11 indicates the number of clock cycles required to access data after a command is issued, representing a standard performance level for DDR3 modules of this speed. As a server-grade memory component, this RDIMM typically supports ECC (Error-Correcting Code) functionality. ECC memory can detect and correct common types of internal data corruption, which is critical for maintaining data integrity and system stability in mission-critical applications. This module is suitable for systems that require reliable, high-capacity memory upgrades.
