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Samsung M393B2G70QH0-CK009 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Form Factor: RDIMM (Registered DIMM)
- Rank: 2Rx4 (Dual Rank x4)
- CAS Latency: CL11
- Voltage: 1.5V
- Designed for server and workstation applications.
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Product Overview
The Samsung M393B2G70QH0-CK009 is a 16GB DDR3 RDIMM (Registered DIMM) memory module. It operates at a speed of 1600MHz (PC3-12800) with timings of CL11 and features a 2Rx4 rank configuration. This module is designed for servers and workstations requiring high-capacity, reliable memory.
Technical Information
| Manufacturer | Samsung |
| Part Number | M393B2G70QH0-CK009 |
| Capacity | 16GB |
| Type | DDR3 SDRAM |
Additional Specifications
| Speed | 1600MHz |
| Form Factor | RDIMM |
| Rank | 2Rx4 |
| CAS Latency | CL11 |
Product Description
The Samsung M393B2G70QH0-CK009 is a high-performance 16GB DDR3 Registered DIMM (RDIMM) memory module, engineered for demanding server and workstation environments. Operating at a clock speed of 1600MHz (also known as PC3-12800), this module provides substantial bandwidth for data-intensive applications and multitasking. The RDIMM form factor includes an onboard register that buffers data signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved stability in systems with many memory modules. This module features a 2Rx4 rank configuration, indicating it has two ranks of memory chips, each with four data lines per chip. This configuration can offer performance benefits in certain server architectures by allowing the memory controller to access different ranks concurrently. With a CAS Latency (CL) of 11, it strikes a balance between speed and timing, providing efficient data access for a wide range of server workloads. Designed for reliability and compatibility with enterprise-grade systems, the M393B2G70QH0-CK009 is an ideal choice for upgrading or populating memory in servers that support DDR3 RDIMMs. Its 16GB capacity per module contributes to building large memory pools, essential for virtualization, database management, scientific computing, and other memory-hungry applications.
