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Samsung M393B2G70BH0-CMA08 16GB DDR3-1866MHz RDIMM 2Rx4 CL13 Memory
- 16GB DDR3 RDIMM Memory Module
- Speed: 1866MHz
- CAS Latency: CL13
- Rank: 2Rx4
- ECC Registered: Yes
- Form Factor: DIMM
- Voltage: Standard DDR3
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Product Overview
The Samsung M393B2G70BH0-CMA08 is a 16GB DDR3 RDIMM memory module, operating at 1866MHz with a CAS latency of CL13. It is designed for server and workstation applications requiring reliable and high-speed memory.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1866MHz |
Additional Specifications
| CAS Latency | CL13 |
| Rank | 2Rx4 |
| ECC | Registered ECC |
Product Description
This Samsung 16GB DDR3 RDIMM (Registered Dual In-line Memory Module) is a high-performance memory component designed for server and workstation environments. With a speed of 1866MHz and a CAS latency of CL13, it delivers efficient data throughput for demanding computing tasks. The 2Rx4 rank configuration indicates two ranks of memory chips, each with 4 bits of data per chip, optimizing performance and capacity utilization. The RDIMM architecture includes a register chip that buffers the command and address signals between the memory controller and the DRAM devices. This buffering reduces electrical load on the memory controller, enabling higher memory speeds and greater module density. Furthermore, the module features ECC (Error-Correcting Code) functionality, which detects and corrects common types of memory errors, ensuring data integrity and system stability, crucial for continuous operation in server environments. Ideal for upgrading existing server infrastructure or building new high-performance systems, the M393B2G70BH0-CMA08 provides a reliable and fast memory solution. Its specifications are well-suited for applications such as virtualization, database management, scientific computing, and other memory-intensive workloads where performance and stability are critical. This module represents a significant enhancement for systems requiring robust and efficient memory performance.


