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Samsung M393B2G70BH0-CK0Q8 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Form Factor: RDIMM (Registered DIMM)
- Rank: 2Rx4 (Dual Rank, x4 organization)
- Latency: CL11
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
- Designed for servers and workstations
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Product Overview
The Samsung M393B2G70BH0-CK0Q8 is a 16GB DDR3-1600MHz RDIMM memory module. It is designed for servers and high-performance workstations requiring reliable and fast memory. This module features a 2Rx4 configuration and CL11 latency, optimized for demanding computing tasks.
Technical Information
| Memory Size | 16GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1600MHz |
| Form Factor | RDIMM |
| Rank | 2Rx4 |
Additional Specifications
| CAS Latency | CL11 |
| ECC | Yes |
| Manufacturer | Samsung |
| Part Number | M393B2G70BH0-CK0Q8 |
Product Description
The Samsung M393B2G70BH0-CK0Q8 is a high-capacity 16GB Registered Dual In-line Memory Module (RDIMM) engineered for server and workstation environments. Operating at a speed of 1600MHz (also known as PC3-12800), this module provides substantial bandwidth for memory-intensive applications. The DDR3 technology ensures efficient data transfer, making it suitable for tasks such as virtualization, database management, and complex data analysis. This specific module features a 2Rx4 configuration, indicating it is dual-rank with a x4 memory chip organization. This configuration can offer performance benefits in certain server architectures by allowing the memory controller to access different ranks independently. Furthermore, it incorporates Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors, enhancing system stability and data integrity – a critical requirement for mission-critical server operations. With a CAS Latency (CL) of 11, the M393B2G70BH0-CK0Q8 strikes a balance between speed and stability. The RDIMM format includes registers that buffer command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and speeds. This makes it an ideal choice for systems requiring significant amounts of reliable, high-performance RAM.
