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Samsung M393B2G70BH0-CH9 16GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600R)
- Rank: 2Rx4 (Dual Rank, x4 organization)
- Latency: CL9
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
- Designed for servers and workstations
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Product Overview
The Samsung M393B2G70BH0-CH9 is a 16GB DDR3 RDIMM (Registered DIMM) memory module operating at 1333MHz. It features a 2Rx4 rank configuration and CL9 latency, designed for servers and high-performance workstations requiring reliable and high-capacity RAM.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
| Part Number | M393B2G70BH0-CH9 |
Additional Specifications
| Rank | 2Rx4 |
| Latency | CL9 |
| ECC | Registered ECC |
| Brand | Samsung |
Product Description
This Samsung M393B2G70BH0-CH9 module is a 16GB Registered DIMM (RDIMM) operating at DDR3 speeds of 1333MHz, commonly referred to as PC3-10600R. RDIMMs are designed for server environments as they include registers to buffer command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and densities. The module is configured as 2Rx4, indicating it is dual-rank with each rank utilizing x4 data-wide DRAM chips. Dual-rank modules can offer performance benefits in certain scenarios by allowing the memory controller to interleave accesses between ranks. The CAS Latency (CL) is 9, which specifies the number of clock cycles required for the memory to respond to a column read command. With its 16GB capacity, DDR3 technology, and ECC (Error-Correcting Code) support, this memory module is suitable for upgrading or populating memory in compatible servers and workstations. It is engineered for reliability and performance in demanding enterprise applications, ensuring data integrity and system stability.
