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Samsung M393B1K70DH0-CK0E8 8GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- 8GB DDR3 SDRAM capacity
- Speed: 1600MHz (PC3-12800)
- Type: RDIMM (Registered DIMM)
- Latency: CL11
- Configuration: 2Rx4 (Dual Rank, x4 Data Width)
- ECC (Error-Correcting Code) support
- 1.5V VDD voltage
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Product Overview
The Samsung M393B1K70DH0-CK0E8 is an 8GB DDR3-1600MHz Registered DIMM (RDIMM) memory module. It is designed for servers and workstations requiring reliable and efficient memory.
Technical Information
| Memory Type | DDR3 SDRAM |
| Form Factor | DIMM |
| Module Type | RDIMM |
| Capacity | 8GB |
Additional Specifications
| Speed | 1600MHz |
| CAS Latency | CL11 |
| Rank | 2Rx4 |
Product Description
The Samsung M393B1K70DH0-CK0E8 is a high-quality 8GB DDR3 Registered DIMM (RDIMM) memory module, operating at a speed of 1600MHz (PC3-12800). This module is engineered for server and workstation environments where stability, reliability, and performance are paramount. The RDIMM architecture includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller and enabling support for higher memory capacities and improved system stability. Featuring ECC (Error-Correcting Code) functionality, this memory module can detect and correct single-bit errors in real-time, significantly reducing the risk of data corruption and system crashes. This makes it an essential component for mission-critical applications and environments where data integrity is non-negotiable. The 2Rx4 configuration (dual rank, x4 data width) optimizes memory access patterns for enhanced performance. With a CAS latency of CL11, this 8GB DDR3 RDIMM provides a balance of speed and capacity, making it suitable for a wide range of server applications, including virtualization, database management, and enterprise computing. The standard 1.5V operating voltage ensures compatibility with a broad spectrum of DDR3-compatible server platforms. This Samsung memory module is a reliable choice for upgrading or populating server memory to meet demanding computational needs.
