Samsung M393B1K70DH0-CK008 8GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

SKU M393B1K70DH0-CK008

Brand Samsung

8 GB DDR3
240-pin DIMM 1 x 8 GB
CAS latency: 11
1.5 V
ECC

Available to order

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Key specifications

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CAS latency: 11
Internal memory: 8 GB
Memory layout (modules x size): 1 x 8 GB
Internal memory type: DDR3
Memory clock speed: 1600 MHz
Memory form factor: 240-pin DIMM

Documents

Brochure Samsung M393B1K70DH0-CK008Brochure · PDF

Product details

Samsung M393B1K70DH0-CK008. Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 240-pin DIMM, CAS latency: 11, ECC

Features

CAS latency	11
Internal memory	8 GB
Memory layout (modules x size)	1 x 8 GB
Internal memory type	DDR3
Memory clock speed	1600 MHz
Memory form factor	240-pin DIMM
ECC	Yes
Buffered memory type	Registered (buffered)
Memory voltage	1.5 V
SPD profile	Yes

Weight & dimensions

Height

30 mm

Packaging data

Package type

DIMM

Other features

Chips organisation

1G x 72

Description

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.

Condition: Refurbished