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Samsung M393B1K70DH0-CH9Q8 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory

Samsung M393B1K70DH0-CH9Q8 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory

SKU M393B1K70DH0-CH9Q8
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  • Voltage: 1.5V
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Key specifications

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Memory Type
DDR3 SDRAM
Capacity
8GB
Speed
1333MHz
Form Factor
RDIMM
CAS Latency
CL9
Rank
2Rx4

Product details

This Samsung 8GB DDR3 RDIMM memory module is designed for server and workstation environments. It operates at a speed of 1333MHz with CL9 latency, providing reliable performance for demanding applications.

Specifications

Memory Type
DDR3 SDRAM
Capacity
8GB
Speed
1333MHz
Form Factor
RDIMM
CAS Latency
CL9
Rank
2Rx4
ECC
Yes

Description

The Samsung M393B1K70DH0-CH9Q8 is a high-performance 8GB DDR3 Registered DIMM (RDIMM) memory module, engineered for robust server and workstation applications. Operating at a frequency of 1333MHz, it delivers substantial bandwidth crucial for multitasking and data-intensive operations. The 2Rx4 configuration signifies a dual-rank design with four data bits per chip, optimizing memory access efficiency and overall system responsiveness. This module features a CAS Latency (CL) of 9, indicating the number of clock cycles required to access a particular column address. This timing parameter is critical for memory performance, and CL9 at 1333MHz represents a balanced approach to speed and latency for many enterprise-grade systems. The RDIMM form factor includes onboard registers that buffer command and address signals, reducing electrical load on the memory controller and enabling higher memory capacities and densities. Furthermore, the M393B1K70DH0-CH9Q8 incorporates Error-Correcting Code (ECC) functionality. ECC memory can detect and correct common types of internal data corruption, significantly enhancing data integrity and system stability. This makes it an indispensable component for mission-critical environments where data accuracy and uptime are paramount, such as in servers, data centers, and high-performance computing platforms.

Condition: Refurbished

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