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Samsung M393A8G40MB2-CVFG0 64GB DDR4-2933MHz RDIMM 4Rx4 CL21 Memory
- Capacity: 64GB
- Type: DDR4 SDRAM
- Speed: 2933MHz (PC4-23466)
- Form Factor: RDIMM (Registered DIMM)
- Rank: 4Rx4
- Latency: CL21
- ECC: Yes (Error-Correcting Code)
- Designed for servers and high-end workstations
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Product Overview
The Samsung M393A8G40MB2-CVFG0 is a 64GB DDR4-2933MHz RDIMM (Registered DIMM) memory module. It features a 4Rx4 rank configuration and CL21 latency, designed for high-performance servers and workstations requiring substantial memory capacity and speed.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 SDRAM |
| Speed | 2933MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL21 |
| ECC | Yes |
| Brand | Samsung |
Product Description
The Samsung M393A8G40MB2-CVFG0 is a high-capacity 64GB memory module engineered for demanding enterprise environments. It operates at a speed of 2933MHz, providing significant bandwidth for data-intensive applications, virtualization, and large databases. As a DDR4 Registered DIMM (RDIMM), it includes onboard registers to buffer memory addresses and commands, reducing electrical load on the memory controller and allowing for higher memory capacities and improved stability in multi-processor systems. The module's 4Rx4 rank configuration signifies that it utilizes four ranks of memory chips, each with four data bits per chip. This configuration offers a high degree of parallelism and bandwidth, making it suitable for servers that require maximum memory performance. Furthermore, the inclusion of Error-Correcting Code (ECC) functionality ensures data integrity by detecting and correcting single-bit errors, which is critical for maintaining system reliability in mission-critical applications. With a CAS Latency (CL) of 21, this memory module strikes a balance between speed and latency, optimized for server workloads. The M393A8G40MB2-CVFG0 is designed to meet the stringent requirements of modern servers and high-performance workstations, offering a substantial upgrade for systems needing increased memory capacity and enhanced data processing capabilities.
