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Samsung M393A8G40MB2-CTD60 64GB DDR4-2666MHz RDIMM 2Rx4 CL19 Memory
- Capacity: 64GB
- Type: DDR4 RDIMM
- Speed: 2666MHz (PC4-21300)
- CAS Latency: CL19
- Rank: 2Rx4
- Voltage: 1.2V
- ECC: Yes (Registered)
- Optimized for server and enterprise applications
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Product Overview
The Samsung M393A8G40MB2-CTD60 is a 64GB DDR4 RDIMM memory module. It operates at 2666MHz with a CL19 latency and features a 2Rx4 rank configuration, suitable for servers requiring high memory capacity and performance.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 RDIMM |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank Configuration | 2Rx4 |
| ECC | Registered ECC |
Product Description
The Samsung M393A8G40MB2-CTD60 is a 64GB DDR4 Registered DIMM (RDIMM) memory module, designed to deliver robust performance and capacity for server and workstation environments. Operating at a frequency of 2666MHz (PC4-21300), this module provides ample bandwidth for demanding applications. The RDIMM format includes an onboard buffer chip that reduces the electrical load on the memory controller, enabling systems to support higher memory capacities and maintain stability. This module is configured as 2Rx4, meaning it has two ranks per module, and each DRAM chip is organized with a 4-bit data width. Compared to a 4Rx4 configuration, a 2Rx4 module typically offers a slightly different balance of performance and density, often preferred in specific server architectures. The CAS Latency (CL) is set at 19, indicating the number of clock cycles required for the memory to respond to a column address command, which is a standard specification for DDR4 modules of this speed. Equipped with ECC (Error-Correcting Code) functionality, the M393A8G40MB2-CTD60 can detect and correct common memory errors, ensuring data integrity and system uptime, which are critical in enterprise settings. Operating at a standard voltage of 1.2V, this module is compatible with a wide range of DDR4-enabled servers and workstations, offering a reliable solution for memory upgrades and new system builds requiring substantial memory resources for tasks like virtualization, large-scale data processing, and complex simulations.



