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Samsung M393A8K40B21-CRB 64GB DDR4-2133MHz RDIMM 4Rx4 CL15 Memory
- 64GB DDR4 SDRAM capacity
- 2133MHz memory speed
- RDIMM (Registered DIMM) form factor
- 4 ranks x 4 bits organization (4Rx4)
- CL15 CAS Latency
- ECC (Error-Correcting Code) support
- Designed for server and workstation use
- High-density memory module
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Product Overview
The Samsung M393A8K40B21-CRB is a 64GB DDR4 Registered DIMM (RDIMM) memory module. It operates at 2133MHz with a CAS Latency of CL15, designed for high-capacity server and workstation applications requiring robust performance and reliability.
Technical Information
| Memory Type | DDR4 SDRAM |
| Capacity | 64GB |
| Speed | 2133MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL15 |
| Voltage | 1.2V |
Product Description
This Samsung memory module, SKU M393A8K40B21-CRB, is a high-capacity 64GB DDR4 Registered DIMM (RDIMM). It is engineered for demanding server and workstation environments where large amounts of memory are crucial for performance, such as in virtualization, large databases, and complex scientific simulations. The DDR4 technology offers improved power efficiency and higher bandwidth compared to previous DDR generations. The module operates at a speed of 2133MHz, providing substantial data transfer rates necessary for modern enterprise workloads. Its Registered DIMM design incorporates an on-board register to buffer command and address signals, which reduces the load on the memory controller and enhances system stability, especially when populating multiple DIMMs. The 4Rx4 rank configuration indicates a sophisticated internal arrangement for optimal performance in compatible server architectures. With a CAS Latency of CL15, this memory module balances speed and responsiveness. It is built for reliability and data integrity, featuring ECC (Error-Correcting Code) support to detect and correct memory errors, which is critical for mission-critical applications. This 64GB RDIMM is an ideal choice for high-density server configurations requiring maximum memory capacity and dependable performance.


