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Samsung M328L5628BT0-CB0 2GB DDR-266MHz Micro-DIMM 2Rx8 CL2.5 Memory
- 2GB memory capacity
- DDR SDRAM technology
- 266MHz clock speed (PC2100 equivalent)
- CL2.5 latency timing
- Micro-DIMM form factor
- 2Rx8 memory organization
- Designed for compact devices
- Samsung quality and reliability
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Product Overview
The Samsung M328L5628BT0-CB0 is a 2GB DDR memory module. It operates at 266MHz with CL2.5 timings and utilizes a Micro-DIMM form factor with a 2Rx8 configuration.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR SDRAM |
| Speed | 266MHz |
| CAS Latency | CL2.5 |
Additional Specifications
| Form Factor | Micro-DIMM |
| Organization | 2Rx8 |
| Voltage | 2.5V (typical for DDR) |
| Manufacturer | Samsung |
Product Description
The Samsung M328L5628BT0-CB0 is a 2 Gigabyte (GB) memory module designed to enhance the performance of compatible electronic devices. It utilizes Double Data Rate Synchronous Dynamic Random-Access Memory (DDR SDRAM) technology, operating at a frequency of 266MHz. This speed corresponds to the PC2100 standard, indicating its data transfer capabilities. This module features a CAS Latency (CL) of 2.5, which defines the delay between the memory controller requesting data and the data becoming available. The Micro-DIMM form factor is a compact variant of the standard DIMM, making it suitable for space-constrained applications such as laptops, small form-factor PCs, or other portable electronic devices. The 2Rx8 organization signifies that the memory chip is arranged with two ranks (2R) of eight bits (x8) each, optimizing data access. As a product from Samsung, a leading memory manufacturer, the M328L5628BT0-CB0 is built with a focus on reliability and performance. This memory module is intended to provide a significant boost in computing power, enabling smoother multitasking and faster application loading for devices equipped with compatible Micro-DIMM slots.
