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Samsung M328L5628BT0-CB0M1 2GB DDR-266MHz Micro-DIMM 2Rx8 CL2.5 Memory
- 2GB memory capacity
- DDR SDRAM technology
- 266MHz clock speed
- CL2.5 latency
- Micro-DIMM form factor
- 2Rx8 memory organization
- Samsung branded memory
- Variant of M328L5628BT0-CB0
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Product Overview
The Samsung M328L5628BT0-CB0M1 is a 2GB DDR memory module, operating at 266MHz with CL2.5 timings. It features a Micro-DIMM form factor and a 2Rx8 configuration, likely representing a specific revision or variant.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR SDRAM |
| Speed | 266MHz |
| CAS Latency | CL2.5 |
Additional Specifications
| Form Factor | Micro-DIMM |
| Organization | 2Rx8 |
| Manufacturer | Samsung |
Product Description
The Samsung M328L5628BT0-CB0M1 is a 2 Gigabyte (GB) DDR SDRAM memory module. It operates at a clock speed of 266MHz, commonly associated with the PC2100 standard, and features a CAS Latency (CL) of 2.5. This module adheres to the Micro-DIMM form factor, which is a smaller footprint designed for portable computing devices and other space-constrained systems. The memory organization is specified as 2Rx8, indicating two ranks of memory chips, each with an 8-bit data width. This configuration is standard for many DDR memory modules and contributes to efficient data throughput. The '-CB0M1' suffix suggests this might be a specific revision, manufacturing lot, or minor variation of the base M328L5628BT0-CB0 part number, potentially with minor component differences or manufacturing process updates. As a component from Samsung, a globally recognized leader in memory technology, this module is expected to deliver reliable performance. It is designed to upgrade or replace existing memory in compatible systems, aiming to improve overall system responsiveness, multitasking capabilities, and application performance.
