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Samsung M328L5128MT0-CB0M0 2GB DDR-266MHz Micro-DIMM 2Rx8 CL2.5 Memory
- 2GB Capacity
- DDR-266MHz Speed
- Micro-DIMM Form Factor
- 2Rx8 Configuration
- CL2.5 Latency
- Compact memory module
- Suitable for embedded systems or specific laptops
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Product Overview
This Samsung memory module is a 2GB DDR-266MHz Micro-DIMM. It features a 2Rx8 configuration and CL2.5 latency, designed for specific compact computing devices or embedded systems requiring small form factor memory. The DDR-266MHz speed indicates it's for older or specialized platforms.
Technical Information
| Capacity | 2GB |
| Type | DDR |
| Speed | 266MHz |
Additional Specifications
| Form Factor | Micro-DIMM |
| Configuration | 2Rx8 |
| CAS Latency | CL2.5 |
Product Description
The Samsung M328L5128MT0-CB0M0 is a 2GB memory module engineered for systems that require compact memory solutions. Operating at DDR-266MHz, it belongs to an older generation of RAM technology, typically found in specialized devices, industrial PCs, or certain compact laptops where standard DIMMs or SO-DIMMs would not fit. The module utilizes a 2Rx8 configuration, meaning it has two ranks of memory chips, each with eight bits of data width. This configuration can affect how the memory controller accesses the module and can influence performance in certain system architectures. The CAS Latency (CL) of 2.5 indicates the number of clock cycles it takes for the memory to respond to a command, with lower numbers generally indicating faster response times. The Micro-DIMM form factor is significantly smaller than standard DIMMs and even SO-DIMMs, making it suitable for highly space-constrained applications. This specific module is designed for compatibility with motherboards and chipsets that support DDR memory at 266MHz and utilize the Micro-DIMM form factor.
