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Micron MT9HTF6472FY-53ED4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- Capacity: 512MB
- Memory Type: DDR2 FB-DIMM
- Speed: 533MHz
- CAS Latency: CL4
- Configuration: 1Rx8 (Single Rank, 8 Banks)
- Voltage: Standard DDR2 voltage
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Designed for server and workstation environments
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Key specifications
See full specs ↓- Memory Size
- 512MB
- Memory Type
- DDR2 SDRAM
- Form Factor
- FB-DIMM
- Speed
- 533 MHz
- CAS Latency
- CL4
- Rank
- 1Rx8
Product details
The Micron MT9HTF6472FY-53ED4E3 is a 512MB DDR2 FB-DIMM memory module designed for servers and high-performance workstations. It operates at a speed of 533MHz with a CAS Latency of 4, providing efficient data transfer for demanding applications.
Technical Information
| Memory Size | 512MB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Speed | 533 MHz |
Additional Specifications
| CAS Latency | CL4 |
| Rank | 1Rx8 |
| ECC | Yes (FB-DIMM implies ECC) |
| Voltage | 1.8V |
Description
This Micron memory module, identified by SKU MT9HTF6472FY-53ED4E3, is a 512MB component engineered for server-grade applications requiring robust memory performance. As a DDR2 Fully Buffered DIMM (FB-DIMM), it offers enhanced bandwidth and error correction capabilities crucial for maintaining data integrity in mission-critical systems. The 1Rx8 organization signifies a single rank with eight internal memory banks, optimizing access patterns for improved efficiency.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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