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Micron MT9HTF6472FY-53EB4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory

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Micron MT9HTF6472FY-53EB4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory

SKU MT9HTF6472FY-53EB4E3
Brand Micron
  • 512MB DDR2 SDRAM
  • 533MHz Memory Speed
  • FB-DIMM (Fully Buffered DIMM)
  • 1Rx8 (Single Rank, x8 organization)
  • CL4 CAS Latency
  • ECC (Error-Correcting Code) support
  • Advanced Memory Buffer (AMB) chip
  • Server-grade memory module
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Key specifications

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Memory Capacity
512MB
Memory Type
DDR2 SDRAM
Form Factor
FB-DIMM
Speed
533MHz
Rank
1Rx8
CAS Latency
CL4

Product details

This Micron 512MB DDR2 FB-DIMM operates at 533MHz with CL4 latency, featuring a 1Rx8 configuration and an integrated Advanced Memory Buffer (AMB). It is designed for server environments requiring stable and scalable memory solutions.

Technical Information

Memory Capacity512MB
Memory TypeDDR2 SDRAM
Form FactorFB-DIMM
Speed533MHz

Additional Specifications

Rank1Rx8
CAS LatencyCL4
Voltage1.8V
ECCYes

Description

The Micron MT9HTF6472FY-53EB4E3 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) module, engineered for server and workstation platforms that demand high memory bandwidth and stability. DDR2 technology provides a significant performance uplift over DDR, and the FB-DIMM architecture further enhances this by incorporating an Advanced Memory Buffer (AMB) chip. This chip acts as a serializer/deserializer, managing data flow between the memory controller and the DRAM chips, thereby reducing signal degradation and enabling higher memory capacities. Operating at a frequency of 533MHz, this module delivers robust performance suitable for memory-intensive server applications. The 1Rx8 organization signifies a single rank of DRAM devices, each with an x8 data width. The CAS Latency (CL) of 4 is characteristic of DDR2 memory operating at this speed, providing a good balance between access time and data throughput. Crucially, this FB-DIMM includes ECC (Error-Correcting Code) capabilities, which are essential for maintaining data integrity in critical server environments. The AMB chip also plays a role in managing command and address signals, contributing to the overall stability and scalability of memory configurations. The MT9HTF6472FY-53EB4E3 is a reliable component for building high-density, high-performance memory subsystems in servers and workstations.

Condition: Refurbished

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Typically 12 days handling, 37 days in transit.

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