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Micron MT9HTF6472FY-53EB4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- 512MB DDR2 SDRAM
- 533MHz Memory Speed
- FB-DIMM (Fully Buffered DIMM)
- 1Rx8 (Single Rank, x8 organization)
- CL4 CAS Latency
- ECC (Error-Correcting Code) support
- Advanced Memory Buffer (AMB) chip
- Server-grade memory module
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Product Overview
This Micron 512MB DDR2 FB-DIMM operates at 533MHz with CL4 latency, featuring a 1Rx8 configuration and an integrated Advanced Memory Buffer (AMB). It is designed for server environments requiring stable and scalable memory solutions.
Technical Information
| Memory Capacity | 512MB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Speed | 533MHz |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL4 |
| Voltage | 1.8V |
| ECC | Yes |
Product Description
The Micron MT9HTF6472FY-53EB4E3 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) module, engineered for server and workstation platforms that demand high memory bandwidth and stability. DDR2 technology provides a significant performance uplift over DDR, and the FB-DIMM architecture further enhances this by incorporating an Advanced Memory Buffer (AMB) chip. This chip acts as a serializer/deserializer, managing data flow between the memory controller and the DRAM chips, thereby reducing signal degradation and enabling higher memory capacities. Operating at a frequency of 533MHz, this module delivers robust performance suitable for memory-intensive server applications. The 1Rx8 organization signifies a single rank of DRAM devices, each with an x8 data width. The CAS Latency (CL) of 4 is characteristic of DDR2 memory operating at this speed, providing a good balance between access time and data throughput. Crucially, this FB-DIMM includes ECC (Error-Correcting Code) capabilities, which are essential for maintaining data integrity in critical server environments. The AMB chip also plays a role in managing command and address signals, contributing to the overall stability and scalability of memory configurations. The MT9HTF6472FY-53EB4E3 is a reliable component for building high-density, high-performance memory subsystems in servers and workstations.
