Micron MT9HTF6472FY-53EB4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
Shop all Micron parts (4,987) ›- 512MB DDR2 SDRAM
- 533MHz Memory Speed
- FB-DIMM (Fully Buffered DIMM)
- 1Rx8 (Single Rank, x8 organization)
- CL4 CAS Latency
- ECC (Error-Correcting Code) support
- Advanced Memory Buffer (AMB) chip
- Server-grade memory module
MT9HTF6472FY-53EB4E3 isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.
Key specifications
See full specs ↓- Memory Capacity
- 512MB
- Memory Type
- DDR2 SDRAM
- Form Factor
- FB-DIMM
- Speed
- 533MHz
- Rank
- 1Rx8
- CAS Latency
- CL4
Product details
This Micron 512MB DDR2 FB-DIMM operates at 533MHz with CL4 latency, featuring a 1Rx8 configuration and an integrated Advanced Memory Buffer (AMB). It is designed for server environments requiring stable and scalable memory solutions.
Specifications
- Memory Capacity
- 512MB
- Memory Type
- DDR2 SDRAM
- Form Factor
- FB-DIMM
- Speed
- 533MHz
- Rank
- 1Rx8
- CAS Latency
- CL4
- Voltage
- 1.8V
- ECC
- Yes
Description
The Micron MT9HTF6472FY-53EB4E3 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) module, engineered for server and workstation platforms that demand high memory bandwidth and stability. DDR2 technology provides a significant performance uplift over DDR, and the FB-DIMM architecture further enhances this by incorporating an Advanced Memory Buffer (AMB) chip. This chip acts as a serializer/deserializer, managing data flow between the memory controller and the DRAM chips, thereby reducing signal degradation and enabling higher memory capacities. Operating at a frequency of 533MHz, this module delivers robust performance suitable for memory-intensive server applications. The 1Rx8 organization signifies a single rank of DRAM devices, each with an x8 data width. The CAS Latency (CL) of 4 is characteristic of DDR2 memory operating at this speed, providing a good balance between access time and data throughput. Crucially, this FB-DIMM includes ECC (Error-Correcting Code) capabilities, which are essential for maintaining data integrity in critical server environments. The AMB chip also plays a role in managing command and address signals, contributing to the overall stability and scalability of memory configurations. The MT9HTF6472FY-53EB4E3 is a reliable component for building high-density, high-performance memory subsystems in servers and workstations.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
Buying 10+ units?
Get volume pricing and availability for MT9HTF6472FY-53EB4E3.
