Micron MT9HTF6472FY-53EB4D2 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory

Product Description

The Micron MT9HTF6472FY-53EB4D2 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) module, specifically engineered for server and high-end workstation applications. DDR2 technology offers improved performance over DDR, and FB-DIMMs further enhance this by incorporating an Advanced Memory Buffer (AMB) chip on each module. This AMB chip serializes data between the memory controller and the DRAM, effectively eliminating the electrical loading issues associated with traditional DIMMs and enabling higher memory densities and frequencies. Operating at a speed of 533MHz, this module provides substantial bandwidth for demanding server workloads. The 1Rx8 configuration indicates a single rank of DRAM devices, each with an x8 data width. The CAS Latency (CL) is rated at 4, which is typical for DDR2 memory operating at this speed, balancing responsiveness with throughput. As an FB-DIMM, this module inherently supports Error-Correcting Code (ECC) functionality, crucial for maintaining data integrity in mission-critical server environments. The AMB chip also handles command and address signaling, isolating the memory controller from the DRAM array. This design allows for greater scalability in memory configurations, making it suitable for servers requiring large amounts of reliable memory.