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Samsung M474A4G43MB1-CTDQ0 32GB DDR4-2666MHz SODIMM 2Rx8 CL19 Memory
- 32GB Capacity
- DDR4 SDRAM Type
- Speed: 2666MHz (PC4-21300)
- Form Factor: SODIMM
- Configuration: 2Rx8 (Dual Rank, x8)
- Latency: CL19
- Voltage: 1.2V
- ECC: Yes (Unbuffered)
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Product Overview
The Samsung M474A4G43MB1-CTDQ0 is a 32GB DDR4 memory module designed for servers and workstations. It operates at 2666MHz with a CL19 latency and features a 2Rx8 configuration.
Technical Information
| Capacity | 32GB |
| Type | DDR4 SDRAM |
| Speed | 2666MHz |
| Form Factor | SODIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
Product Description
The Samsung M474A4G43MB1-CTDQ0 is a high-capacity 32GB DDR4 SODIMM memory module, engineered to deliver robust performance and reliability for demanding computing environments such as servers and workstations. Running at 2666MHz (PC4-21300), it provides ample bandwidth for multitasking and running memory-intensive applications. This module utilizes a 2Rx8 configuration, indicating it is dual-ranked with x8 memory chips, which can enhance performance in systems that support dual-rank configurations. The CAS Latency of CL19, combined with DDR4 technology, ensures efficient data access and processing for a smooth user experience. With a standard 1.2V operating voltage and SODIMM form factor, this memory module is designed for broad compatibility with compatible motherboards and systems. It's an excellent choice for upgrading existing systems or building new ones that require substantial memory capacity and reliable performance for intensive workloads.
