Safe checkout
Secure payments
Fast dispatch
1–2 day handling
Free shipping
U.S. ground
Warranty & RMA
Support after delivery
M474B1G73EB0-YK0 - Samsung 8GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module
- Laptop 8 GB DDR3L
- 204-pin SO-DIMM 1 x 8 GB
- CAS latency: 11
- 1.35 V
- ECC
Request a price for M474B1G73EB0-YK0 — we confirm current pricing and lead time within one business day.
Key specifications
See full specs ↓- CAS latency
- 11
- Internal memory
- 8 GB
- Memory layout (modules x size)
- 1 x 8 GB
- Internal memory type
- DDR3L
- Memory clock speed
- 1600 MHz
- Component for
- Laptop
Product details
Samsung M474B1G73EB0-YK0. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR3L, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11, ECC
Features
| CAS latency | 11 |
| Internal memory | 8 GB |
| Memory layout (modules x size) | 1 x 8 GB |
| Internal memory type | DDR3L |
| Memory clock speed | 1600 MHz |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| ECC | Yes |
| Memory ranking | 2 |
| Memory voltage | 1.35 V |
| Module configuration | 1024M x 64 |
Operational conditions
| Operating temperature (T-T) | 0 - 85 °C |
Weight & dimensions
| Height | 30 mm |
Description
High-performance hardware node designed for mission-critical infrastructure. Engineered to deliver exceptional throughput and reliability across enterprise clusters.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
Buying 10+ units?
Get volume pricing and availability for M474B1G73EB0-YK0.
