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Samsung M393B5273DH0-CK008 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

Samsung M393B5273DH0-CK008 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

SKU:M393B5273DH0-CK008
  • 4GB DDR3 SDRAM capacity
  • Speed: 1600MHz (PC3-12800)
  • Type: Registered DIMM (RDIMM)
  • Configuration: 2Rx8 (Dual Rank x8)
  • Latency: CL11
  • Voltage: 1.5V
  • ECC (Error-Correcting Code) support
  • Suitable for server and workstation memory upgrades
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Product Overview

The Samsung M393B5273DH0-CK008 is a 4GB DDR3-1600MHz Registered DIMM (RDIMM) memory module. It features a 2Rx8 rank configuration and CL11 latency, designed for servers and workstations requiring reliable memory with ECC support.

Technical Information

Memory Capacity4GB
Memory TypeDDR3 SDRAM
Speed1600MHz
Form FactorDIMM
Module TypeRDIMM (Registered)

Additional Specifications

Rank2Rx8
CAS LatencyCL11
Voltage1.5V
ECCYes
ManufacturerSamsung

Product Description

The Samsung M393B5273DH0-CK008 is a 4GB DDR3 memory module designed for server and workstation applications. It operates at a speed of 1600MHz, providing a bandwidth of PC3-12800, which is suitable for a wide range of enterprise computing tasks. This module is a Registered DIMM (RDIMM), meaning it includes an onboard register that buffers command and address signals. This buffering reduces the electrical load on the memory controller, allowing for greater stability and the ability to populate more memory modules in a system, which is crucial for servers handling multiple applications or virtual machines. The module features a 2Rx8 (Dual Rank x8) configuration. Dual rank modules can offer performance benefits in certain scenarios by allowing the memory controller to interleave access between ranks, potentially improving throughput. The 'x8' designation refers to the data width of the memory chips, which is standard for most DIMMs. This configuration provides a good balance of capacity and performance for many server workloads. Crucially for server environments, this Samsung RDIMM supports ECC (Error-Correcting Code) functionality. ECC memory is designed to detect and correct common types of internal data corruption, significantly enhancing data integrity and system reliability. This is vital for mission-critical applications where data accuracy and uptime are paramount. With a CAS Latency (CL) of 11, the module offers responsive performance. Operating at a standard voltage of 1.5V, it is compatible with a broad range of DDR3 server platforms.

Condition:Refurbished

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