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Samsung M393B5273DH0-CK0 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

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Samsung M393B5273DH0-CK0 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

SKU M393B5273DH0-CK0
Brand Samsung
  • PC/Server 4 GB DDR3
  • 240-pin DIMM 1 x 4 GB
  • CAS latency: 11
  • 1.5 V
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Key specifications

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CAS latency
11
Internal memory
4 GB
Memory layout (modules x size)
1 x 4 GB
Internal memory type
DDR3
Memory clock speed
1600 MHz
Component for
PC/Server

Specifications: Specs Icecat. Product content is provided as-is; confirm critical details with us before ordering.

Product details

Samsung 4GB DDR3. Component for: PC/Server, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 240-pin DIMM, CAS latency: 11

Features

CAS latency11
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
Internal memory typeDDR3
Memory clock speed1600 MHz
Component forPC/Server
Memory form factor240-pin DIMM
Buffered memory typeRegistered (buffered)
Memory ranking2
Memory voltage1.5 V
Module configuration256M x 8

Sustainability

Compliance certificatesRoHS

Weight & dimensions

Width133.2 mm
Height30 mm

Other features

Doesn't containHalogen

Description

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios. Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.

Condition: Refurbished

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