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Samsung M393B5270CH0-CH9Q 4GB DDR3-1333MHz RDIMM 1Rx4 CL9 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600)
- Latency: CL9
- Rank: 1Rx4 (Single Rank x4)
- Designed for servers and workstations
- ECC (Error-Correcting Code) support
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Product Overview
The Samsung M393B5270CH0-CH9Q is a 4GB DDR3 RDIMM (Registered DIMM) memory module operating at 1333MHz with CL9 timings. It is designed for server and workstation environments.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM (240-pin) |
| Speed | 1333MHz (PC3-10600) |
Additional Specifications
| CAS Latency | CL9 |
| Rank | 1Rx4 (Single Rank x4) |
| Voltage | 1.5V |
| ECC | Yes (Registered ECC) |
Product Description
The Samsung M393B5270CH0-CH9Q is a 4GB Registered Dual In-line Memory Module (RDIMM) utilizing DDR3 SDRAM technology. Operating at a frequency of 1333MHz, which corresponds to a PC3-10600 designation, this module is engineered for enhanced performance and stability in server and high-end workstation environments. The 'R' in RDIMM signifies that the module incorporates a register chip, which buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved signal integrity. This specific module features a CAS Latency (CL) of 9, indicating the number of clock cycles required to access a particular column in a row. The 1Rx4 configuration denotes a single rank of memory chips, with each chip organized as 4 bits wide. This configuration is common in server memory and contributes to the module's overall performance characteristics. The module also supports ECC (Error-Correcting Code) functionality, which is crucial for detecting and correcting single-bit memory errors, thereby enhancing system reliability and data integrity – a non-negotiable requirement for mission-critical server operations. Designed to be compatible with systems that support DDR3 RDIMMs, this 4GB module is an ideal upgrade or replacement component for servers, blade servers, and workstations requiring robust and reliable memory performance. Its specifications are tailored for demanding computing tasks, ensuring efficient data processing and system stability under heavy workloads.



